SUD50N03-09P-GE3【PDF 2/7 页】MOSFET N-CH D-S 30V TO252

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SUD50N03-09P

Vishay Siliconix

SPECIFICATIONS T J = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ. a

Max.

Unit

Static

Drain-Source Breakdown Voltage

Gate Threshold Voltage

V (BR)DSS

V GS(th)

V GS = 0 V, I D = 250 μA

V DS = V GS , I D = 250 μA

30

1.0

3.0

V

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current b

Drain-Source On-State Resistance b

Forward Transconductance b

I GSS

I DSS

I D(on)

R DS(on)

g fs

V DS = 0 V, V GS = ± 20 V

V DS = 30 V, V GS = 0 V

V DS = 30 V, V GS = 0 V, T J = 125 °C

V DS = 5 V, V GS = 10 V

V GS = 10 V, I D = 20 A

V GS = 10 V, I D = 20 A, T J = 125 °C

V GS = 4.5 V, I D = 20 A

V DS = 15 V, I D = 20 A

50

20

0.0076

0.0115

± 100

1

50

0.0095

0.015

0.014

nA

μA

A

Ω

S

Dynamic a

Input Capacitance

C iss

2200

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge c

Gate-Source Charge c

Gate-Drain Charge c

C oss

C rss

Q g

Q gs

Q gd

V GS = 0 V, V DS = 25 V, f = 1 MHz

V DS = 15 V, V GS = 4.5 V, I D = 50 A

410

180

11

7.5

5.0

16

pF

nC

Gate Resistance

Turn-On Delay Time c

Rise Time c

Turn-Off Delay Time c

Fall Time c

R g

t d(on)

t r

t d(off)

t f

V DD = 15 V, R L = 0.3 Ω

I D ? 50 A, V GEN = 10 V, R g = 2.5 Ω

0.5

1.5

9

15

22

8

2.1

15

25

35

12

Ω

ns

Source-Drain Diode Ratings and Characteristic T C = 25 °C

Pulsed Current

I SM

100

A

Diode Forward Voltage b

Source-Drain Reverse Recovery Time

V SD

t rr

I F = 50 A, V GS = 0 V

I F = 50 A, di/dt = 100 A/μs

1.2

35

1.5

70

V

ns

Notes:

a. Guaranteed by design, not subject to production testing.

b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.

c. Independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

120

90

60

30

V GS = 10 thru 6 V

5V

4V

120

90

60

30

T C = 125 °C

0

3V

2V

0

25 °C

- 55 °C

0

2 4 6 8

10

0

1

2 3 4 5

6

www.vishay.com

2

V DS - Drain-to-Source Voltage (V)

Output Characteristics

V GS - Gate-to-So u rce V oltage ( V )

Transfer Characteristics

Document Number: 71856

S-80793-Rev. G, 14-Apr-08

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